Infineon SPD08P06PGBTMA1 P-Channel Power MOSFET: Datasheet, Application Circuit, and Pinout Configuration

The Infineon SPD08P06PGBTMA1 is a robust P-Channel Power MOSFET housed in a compact and thermally efficient PG-TSDSON-8 (8-pin) package. Engineered for high-performance power management, this component is a cornerstone in modern electronic design, offering an optimal blend of low on-state resistance and high current handling capability. Its primary use cases include load switching, power management in portable devices, battery protection circuits, and DC-DC conversion.

Key Datasheet Specifications and Features

A thorough review of the datasheet reveals the defining electrical characteristics of this MOSFET. It boasts a drain-source voltage (V_DS) of -60 V and a continuous drain current (I_D) of -8.5 A at 25°C. A critical parameter for efficiency is its exceptionally low on-state resistance (R_DS(on)) of just 28 mΩ (max.) at V_GS = -10 V, which minimizes conduction losses and heat generation. The device features a logic-level gate, with a maximum gate-source threshold voltage (V_GS(th)) of -2.5 V, making it directly compatible with 3.3 V and 5 V microcontroller outputs without the need for a driver IC. Furthermore, its avalanche ruggedness ensures high reliability in harsh operating environments where voltage spikes may occur.

Pinout Configuration

Understanding the pinout is crucial for correct PCB layout and assembly. The PG-TSDSON-8 package is designed for superior power dissipation. The pinout is as follows:

Pins 1, 2, 3, 4, 5, 6, 7, 8: These are all connected to the Source (S) terminal. This multi-pin source configuration is designed to minimize parasitic inductance and resistance, thereby enhancing current-carrying capacity and thermal performance.

The large central tab (exposed pad): This is the Drain (D) terminal. It must be soldered to a sufficiently large copper area (PCB pad) on the board to act as a heatsink, which is vital for dissipating the generated heat and maximizing power handling.

Typical Application Circuit

A fundamental application circuit for the SPD08P06PGBTMA1 as a high-side switch is shown below. This configuration is ubiquitous for controlling power to a load (e.g., a motor, lamp, or another subsystem).

```

+--[Load]--+

| |

[V+]------+ +-----D

|

[MCU GPIO]---[R_Gate]----G

|

[GND]------------------- S

```

Operation: The microcontroller's GPIO pin controls the switch. To turn the load ON, the GPIO output is driven LOW (0 V). This creates a negative V_GS voltage (e.g., -5V relative to the source), which turns on the P-Channel MOSFET, allowing current to flow from V+ through the load to ground. To turn the load OFF, the GPIO output is set to HIGH (3.3V or 5V), bringing V_GS close to 0 V, thereby shutting off the MOSFET.

Gate Resistor (R_Gate): A small series resistor (e.g., 10-100 Ω) is often used to dampen ringing and suppress oscillations caused by parasitic inductance and the MOSFET's gate capacitance during fast switching transitions.

ICGOODFIND Summary

The Infineon SPD08P06PGBTMA1 stands out as an excellent choice for designers seeking a high-efficiency, logic-level P-Channel MOSFET. Its standout features include an extremely low R_DS(on) for minimal power loss, a compact PG-TSDSON-8 package for space-constrained applications, and avalanche ruggedness for robust operation. These attributes make it particularly well-suited for demanding applications in automotive systems, consumer electronics, and industrial power controls, where reliability and efficiency are paramount.

Keywords:

1. P-Channel MOSFET

2. Low RDS(on)

3. Logic-Level Gate

4. Load Switch

5. Avalanche Rugged