Infineon IPD90N04S404ATMA1: High-Performance N-Channel MOSFET for Automotive and Industrial Applications
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IPD90N04S404ATMA1, a state-of-the-art N-channel power MOSFET engineered to meet the rigorous demands of modern automotive and industrial systems. This device exemplifies the integration of advanced packaging, superior switching performance, and robust operational characteristics.
Fabricated using Infineon’s proprietary OptiMOS™ 40 V technology, the IPD90N04S404ATMA1 is designed to deliver exceptionally low losses. Its key strength lies in its ultra-low typical on-state resistance (RDS(on)) of just 0.9 mΩ. This minimal resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions. This is particularly vital in space-constrained applications like engine control units (ECUs), electric power steering (EPS), and brake systems, where every watt of power saved contributes to overall vehicle performance and fuel economy.
Beyond its stellar electrical performance, the device is housed in a SuperSO8 package (PG-TSDSO-14), which offers a superior power-to-footprint ratio. This package is renowned for its low parasitic inductance, which is essential for achieving clean and stable switching behavior, especially in high-frequency circuits. This makes the MOSFET an excellent choice for high-frequency DC-DC converters and motor drive circuits found in both automotive and industrial environments, where switching noise and electromagnetic interference (EMI) must be rigorously controlled.
A defining feature of the IPD90N04S404ATMA1 is its AEC-Q101 qualification, which certifies its robustness for use in the harsh operating conditions typical of the automotive industry. It is built to withstand high temperatures, significant thermal cycling, and other stressors that would cause lesser components to fail. This high level of reliability, combined with its lead-free and green packaging, makes it a future-proof component for designers creating next-generation applications.
In industrial settings, this MOSFET finds its place in power supplies, battery management systems (BMS), and robust load switching modules. Its ability to handle high continuous current (up to 390 A) with low losses ensures stable and efficient operation of heavy machinery and automation systems, contributing to reduced downtime and lower operational costs.
ICGOOODFIND: The Infineon IPD90N04S404ATMA1 stands out as a premier solution for designers seeking to optimize power conversion and switching tasks. Its combination of ultra-low RDS(on), advanced SuperSO8 packaging, and automotive-grade AEC-Q101 reliability makes it an indispensable component for pushing the boundaries of performance and efficiency in demanding automotive and industrial applications.
Keywords: OptiMOS™ Technology, Ultra-Low RDS(on), SuperSO8 Package, AEC-Q101 Qualified, High-Frequency Switching.
