Infineon IPD70R900P7S: A 700V CoolMOS™ P7 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced power semiconductors. At the forefront of this innovation is the Infineon IPD70R900P7S, a 700V superjunction MOSFET from the revolutionary CoolMOS™ P7 family. This power transistor is engineered to set new benchmarks in performance for a wide array of high-voltage applications.

A key highlight of the IPD70R900P7S is its exceptionally low on-state resistance (R DS(on)) of just 90 mΩ. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. Designers can leverage this to create more compact solutions with smaller heatsinks or to push the boundaries of power output.

Beyond its static performance, the device excels in dynamic operation. It features outstanding switching characteristics, significantly reducing both turn-on and turn-off losses. This is crucial for high-frequency switching power supplies, where switching losses often become the dominant factor limiting efficiency. The P7 technology incorporates an optimized body diode with enhanced softness and reverse recovery performance. This not only improves reliability in hard-switching topologies like PFC (Power Factor Correction) stages but also minimizes EMI, simplifying filter design and compliance with regulatory standards.

The robust 700V drain-source voltage rating provides a formidable safety margin against voltage spikes and transients, commonly encountered in industrial environments and off-line SMPS (Switched-Mode Power Supplies). This inherent ruggedness makes the transistor a reliable choice for demanding applications, including:

Server and telecom switch-mode power supplies (SMPS)

Industrial motor drives and automation systems

High-power LED lighting drivers

Renewable energy systems like solar inverters

Consumer electronics and fast chargers requiring high power density

Engineered with sustainability in mind, the CoolMOS™ P7 technology embodied in the IPD70R900P7S enables significant energy savings across its entire application spectrum, contributing to a lower carbon footprint.

ICGOOODFIND: The Infineon IPD70R900P7S stands as a superior choice for engineers prioritizing peak efficiency, high power density, and robust reliability. Its blend of an ultra-low R DS(on), fast switching speed, and an optimized diode positions it as an enabling technology for the next generation of high-efficiency power conversion systems.

Keywords: CoolMOS™ P7, High Efficiency, Low R DS(on), 700V MOSFET, Fast Switching