Infineon IPD50N10S3L-16: High-Performance 100V N-Channel Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD50N10S3L-16 stands out as a premier solution, engineered to meet the rigorous demands of modern high-power applications. This 100V N-channel power MOSFET leverages advanced semiconductor technology to deliver exceptional performance in a compact and robust package.

A key highlight of this MOSFET is its remarkably low on-state resistance (RDS(on)) of just 16 mΩ. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Whether deployed in switch-mode power supplies (SMPS), motor control systems, or DC-DC converters, this characteristic ensures that more power is delivered to the load with less wasted energy.

The device is optimized for high-frequency switching operations. Its low gate charge (Qg) and excellent figure of merit (FOM) allow for faster switching speeds, which is essential for increasing the power density of modern designs. This makes it an ideal choice for applications requiring compact form factors without compromising on performance, such as in automotive systems, industrial drives, and server power supplies.

Thermal management is another area where the IPD50N10S3L-16 excels. The MOSFET is housed in Infineon’s proprietary SuperSO8 package, which offers superior thermal conductivity and power dissipation capabilities compared to standard SO-8 packages. This enhanced thermal performance ensures reliable operation even under high-stress conditions, contributing to the overall longevity and stability of the end application.

Furthermore, the device boasts a high avalanche ruggedness and 100% UIS tested capability, providing an additional layer of durability against voltage spikes and transient overloads. This robustness is crucial in environments where electrical noise and unexpected surges are common, safeguarding both the MOSFET and the broader system from potential damage.

ICGOOFind: The Infineon IPD50N10S3L-16 is a high-efficiency, robust power MOSFET that sets a benchmark for performance in its class. With its ultra-low RDS(on), excellent switching characteristics, and superior thermal design, it is an outstanding choice for designers aiming to push the boundaries of power density and reliability.

Keywords:

Power MOSFET

Low RDS(on)

High-Frequency Switching

Thermal Performance

SuperSO8 Package