Infineon IPB042N10N3G: 40V OptiMOS 3 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this need, the Infineon IPB042N10N3G stands out as a high-performance 40V N-channel Power MOSFET built on the advanced OptiMOS 3 technology platform. This device is engineered to deliver exceptional efficiency and reliability in a broad spectrum of DC-DC conversion and motor control applications.

A key strength of the IPB042N10N3G lies in its remarkably low on-state resistance (R DS(on)) of just 4.2 mΩ maximum. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates to less energy wasted as heat and higher overall system efficiency. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS) or as the main switch in motor drive circuits, this characteristic ensures cooler operation and can significantly reduce the need for large heat sinks, aiding in more compact designs.

Complementing its low R DS(on) are excellent switching characteristics. The device features low gate charge (Q G) and low effective output capacitance (C OSS), which are critical for achieving fast switching speeds. This results in reduced switching losses, especially crucial in high-frequency applications where such losses can dominate total power dissipation. The combination of low conduction and switching losses makes this MOSFET a superior choice for high-frequency DC-DC converters, including those in computing, telecommunications, and automotive power systems.

The IPB042N10N3G is offered in the space-saving D 2PAK (TO-263) package, a industry-workhorse known for its good thermal performance and power handling capability. This robust package allows the MOSFET to handle a continuous drain current (I D) of 65 A, making it suitable for demanding high-current applications. Furthermore, its 40V voltage rating provides a comfortable safety margin for 24V bus systems, enhancing system robustness and reliability against voltage spikes.

ICGOOODFIND: The Infineon IPB042N10N3G is an optimal solution for designers prioritizing peak efficiency and power density. Its outstanding blend of ultra-low R DS(on), fast switching performance, and a thermally efficient package makes it an excellent component for enhancing the performance of power conversion stages in servers, industrial drives, and various automotive applications.

Keywords: Power MOSFET, High Efficiency, OptiMOS 3, Low RDS(on), DC-DC Conversion.