Infineon IPA65R420DE: High-Performance 650V CoolMOS™ Power Transistor

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics is a defining trend across industries. At the heart of this evolution are advanced power semiconductors, and Infineon's IPA65R420DE stands as a prime example of this technological leadership. As a 650V superjunction MOSFET from the renowned CoolMOS™ P7 series, it is engineered to set new benchmarks in performance for a wide array of switching applications.

A key differentiator of the IPA65R420DE is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 42 mΩ and optimized gate charge, this device achieves an outstanding balance between conduction and switching losses. This translates directly into higher efficiency, as less energy is wasted as heat during operation. For designers, this means the ability to create systems that either consume less power for the same output or handle more power within the same thermal envelope, thereby pushing the boundaries of power density.

The robust 650V voltage rating provides a significant safety margin, enhancing the reliability and longevity of systems operating from universal input mains voltages (85 VAC – 305 VAC). This makes the transistor ideally suited for challenging environments and ensures stable performance against voltage spikes and transients. Furthermore, the IPA65R420DE incorporates a fast and rugged intrinsic body diode. This feature is critical for performance in half-bridge and full-bridge topologies, commonly found in SMPS, motor drives, and solar inverters, as it improves reverse recovery characteristics and ensures hard-switching ruggedness.

Other notable features include low electromagnetic interference (EMI) due to smooth switching behavior and a high dv/dt capability. These attributes simplify filter design and help engineers meet stringent regulatory standards with greater ease. The device is also optimized for use with both silicon and wide-bandgap (e.g., SiC) drivers, offering design flexibility for next-generation applications.

Typical applications harnessing the power of the IPA65R420DE include:

Server & Telecommunication Switch-Mode Power Supplies (SMPS)

Industrial Motor Drives and Controls

Power Factor Correction (PFC) stages

Solar Inverters and Energy Storage Systems

Charging Infrastructure for Electric Vehicles (EV)

ICGOOODFIND: The Infineon IPA65R420DE is a top-tier 650V superjunction MOSFET that masterfully combines minimal switching and conduction losses with a highly robust design. Its superior efficiency and reliability make it an exceptional choice for high-performance, high-density power conversion systems across industrial, renewable energy, and computing domains.

Keywords: CoolMOS™ P7, High Efficiency, 650V MOSFET, Low RDS(on), Power Density