Infineon SKW25N120FKSA1: A High-Performance 1200V, 25A IGBT for Demanding Power Applications

The Infineon SKW25N120FKSA1 stands as a robust and highly efficient Insulated Gate Bipolar Transistor (IGBT) engineered for high-voltage switching applications. As a discrete power semiconductor, it combines a low saturation voltage with fast switching capabilities, making it an ideal choice for industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems like solar inverters.

This IGBT is characterized by its high voltage rating of 1200V and a collector current of 25A, providing a significant safety margin and reliability in circuits prone to voltage spikes and transients. A key feature of this device is its trenchstop technology, which minimizes saturation voltage (Vce(sat)) and consequently reduces conduction losses. This leads to higher overall system efficiency and lower operating temperatures. Furthermore, its positive temperature coefficient allows for easier parallel configuration, enabling designers to scale up the power handling capability for more demanding applications.

The device is offered in a TO-247 package, renowned for its excellent thermal performance and mechanical robustness. This package ensures efficient heat dissipation away from the silicon die, which is critical for maintaining performance and long-term reliability under high-stress conditions. Designers must implement appropriate gate driving techniques, as specified in the associated application notes, to optimize switching behavior and avoid issues such as Miller plateaus and excessive turn-off overshoot.

Application notes for the SKW25N120FKSA1 provide invaluable guidance on circuit layout, gate driver design, and thermal management. Proper attention to these areas is crucial to mitigate switching losses and prevent parasitic turn-on, ensuring the device operates within its Safe Operating Area (SOA) under all conditions.

ICGOOODFIND: The Infineon SKW25N120FKSA1 is a high-reliability, high-efficiency IGBT that delivers robust performance for high-power switching applications. Its optimal balance of low conduction loss and fast switching speed, facilitated by advanced Trenchstop technology, makes it a superior choice for engineers designing next-generation power conversion systems.

Keywords: IGBT, Trenchstop Technology, 1200V, Power Semiconductor, High Efficiency.