Infineon IPB100N04S4-H2: High-Performance 100V OptiMOS Power MOSFET for Automotive and Industrial Applications
The relentless push for higher efficiency, greater power density, and enhanced reliability in power electronics is a defining trend across the automotive and industrial sectors. Addressing these demanding requirements, Infineon Technologies has introduced the IPB100N04S4-H2, a 100V OptiMOS power MOSFET that sets a new benchmark for performance in a compact package. This device is engineered to meet the rigorous standards of modern applications, from electric vehicle subsystems to robust industrial motor drives.
A cornerstone of this MOSFET's appeal is its exceptionally low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance of just 1.0 mΩ at 10 V and an ultra-low gate charge, the device minimizes both conduction and switching losses. This translates directly into higher overall system efficiency and reduced thermal load, allowing designers to either shrink the size of heatsinks or push for higher power output within the same form factor. The low switching losses are particularly crucial for high-frequency switch-mode power supplies (SMPS) and brushless DC (BLDC) motor drives, where switching performance directly impacts efficiency and electromagnetic interference (EMI).
The IPB100N04S4-H2 is housed in the space-saving Infineon’s proprietary SuperSO8 (PG-TSDSON-8) package. This advanced packaging technology offers a significantly reduced footprint and profile compared to standard D2PAK or DPAK packages while providing superior thermal performance. The package's exposed top side and efficient pinout facilitate excellent heat dissipation, which is critical for maintaining performance and reliability under continuous high-load conditions.
Designed with mission-critical applications in mind, this component boasts outstanding ruggedness and durability. It features a high avalanche ruggedness and is qualified according to the stringent AEC-Q101 standard for automotive applications. This makes it an ideal choice for challenging environments found in automotive systems like electric power steering (EPS), braking systems, 48V mild-hybrid architectures, and battery management systems (BMS). Furthermore, its high reliability makes it equally suitable for harsh industrial environments, including power tools, industrial automation, robotics, and telecom infrastructure.
In summary, the Infineon IPB100N04S4-H2 represents a optimal fusion of low losses, robust packaging, and automotive-grade reliability. It empowers engineers to develop next-generation power systems that are not only more efficient and powerful but also more compact and dependable.
ICGOOODFIND: The Infineon IPB100N04S4-H2 is a top-tier 100V MOSFET that delivers superior efficiency and power density through its low R DS(on) and Q G. Its robust SuperSO8 package and AEC-Q101 qualification make it a premier choice for demanding automotive and industrial power applications.
Keywords: OptiMOS Power MOSFET, Low R DS(on), AEC-Q101 Qualified, SuperSO8 Package, High Efficiency
